Quantum Confinement Controlled Positive to Negative Schottky Barrier Conversion in Ultrathin In 2 O 3 Transistor Contacts
Jian-Yu Lin; Chang Niu; Zehao Lin; Taehyun Kim; Beomjin Park; Hyeongjun Jang; Changwook Jeong; Peide D. Ye
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Electron Devices Meeting (IEDM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iedm50854.2024.10873514
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Cite this source
Jian-Yu Lin; Chang Niu; Zehao Lin; Taehyun Kim; Beomjin Park; Hyeongjun Jang; Changwook Jeong; Peide D. Ye. Quantum Confinement Controlled Positive to Negative Schottky Barrier Conversion in Ultrathin In 2 O 3 Transistor Contacts. 2024 IEEE International Electron Devices Meeting (IEDM). 2024-12-07. https://doi.org/10.1109/iedm50854.2024.10873514