Enhanced Ferroelectric Field Effect Transistor via Interlayer Engineering Featuring Memory Window of 3.6V, Endurance > 10 9 cycles, and Multi-Level Storage for NAND Memory
Jun Lan; Haoran Peng; Wenhui Wang; Zhixiong Li; Guobiao Zhang; Mei Shen; Xuewei Feng; Jiamin Li; Feichi Zhou; Longyang Lin; Yida Li
- Published
- Publisher
- The Japan Society of Applied Physics
- Journal / collection
- Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.7567/ssdm.2024.b-3-03
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Cite this source
Jun Lan; Haoran Peng; Wenhui Wang; Zhixiong Li; Guobiao Zhang; Mei Shen; Xuewei Feng; Jiamin Li; Feichi Zhou; Longyang Lin; Yida Li. Enhanced Ferroelectric Field Effect Transistor via Interlayer Engineering Featuring Memory Window of 3.6V, Endurance > 10 9 cycles, and Multi-Level Storage for NAND Memory. Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials. 2024-09-03. https://doi.org/10.7567/ssdm.2024.b-3-03