A-IGZO FETs with High Current and Remarkable Stability for Vertical Channel Transistor(VCT) / 3D DRAM Applications
Jee-Eun Yang; Younjin Jang; Na-Rae Han; Ha-Jun Sung; Jung-kyun Kim; Youngkwan Cha; Kwang-Hee Lee; Kyooho Jung; Moonil Jung; Wonsok Lee; Min Hee Cho; Sangwook Kim
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/vlsitechnologyandcir46783.2024.10631550
The original publisher provides the full text and its access options.
Cite this source
Jee-Eun Yang; Younjin Jang; Na-Rae Han; Ha-Jun Sung; Jung-kyun Kim; Youngkwan Cha; Kwang-Hee Lee; Kyooho Jung; Moonil Jung; Wonsok Lee; Min Hee Cho; Sangwook Kim. A-IGZO FETs with High Current and Remarkable Stability for Vertical Channel Transistor(VCT) / 3D DRAM Applications. 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2024-06-16. https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631550