Electron thermometry for Si MOS inversion layer using proximity nano-transistor and its application to Joule-heating experiment
Hossain Md Nayem; Masahiro Hori; Katsuhiko Nishiguchi; Yukinori Ono
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0239500
The original publisher provides the full text and its access options.
Cite this source
Hossain Md Nayem; Masahiro Hori; Katsuhiko Nishiguchi; Yukinori Ono. Electron thermometry for Si MOS inversion layer using proximity nano-transistor and its application to Joule-heating experiment. Applied Physics Letters. 2025-02-24. https://doi.org/10.1063/5.0239500