Germanium Doped SnO₂: An Exploratory Channel Material for High On–Off Current Ratio and Low Subthreshold Slope in n-Type SnO₂:Ge Thin Film Transistor
Jay Singh; Suman Gora; Mandeep Jangra; Arnab Datta
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3510237
The original publisher provides the full text and its access options.
Cite this source
Jay Singh; Suman Gora; Mandeep Jangra; Arnab Datta. Germanium Doped SnO₂: An Exploratory Channel Material for High On–Off Current Ratio and Low Subthreshold Slope in n-Type SnO₂:Ge Thin Film Transistor. IEEE Transactions on Electron Devices. 2025-01. https://doi.org/10.1109/ted.2024.3510237