A Nanosheet Oxide Semiconductor FET Using ALD InZnOx Channel
Sung-Hun Kim; Kaito Hikake; Zhuo Li; Takuya Saraya; Toshiro Hiramoto; Masaharu Kobayashi
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE Silicon Nanoelectronics Workshop (SNW)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/snw63608.2024.10639206
The original publisher provides the full text and its access options.
Cite this source
Sung-Hun Kim; Kaito Hikake; Zhuo Li; Takuya Saraya; Toshiro Hiramoto; Masaharu Kobayashi. A Nanosheet Oxide Semiconductor FET Using ALD InZnOx Channel. 2024 IEEE Silicon Nanoelectronics Workshop (SNW). 2024-06-15. https://doi.org/10.1109/snw63608.2024.10639206