High-performance uniform stepper-based InP double-heterojunction bipolar transistor (DHBT) on a 3-inch InP substrate
Seung Heon Shin; Hyeon-Seok Jeong; Yong-Hyun Kim; Yong-Soo Jeon; Ji-Min Beak; Wan-Soo Park; In-Geun Lee; Jacob Yun; Ted Kim; Jae-Hak Lee; Hyuk-Min Kwon; Dae-Hyun Kim
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Solid-State Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.sse.2024.108933
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Cite this source
Seung Heon Shin; Hyeon-Seok Jeong; Yong-Hyun Kim; Yong-Soo Jeon; Ji-Min Beak; Wan-Soo Park; In-Geun Lee; Jacob Yun; Ted Kim; Jae-Hak Lee; Hyuk-Min Kwon; Dae-Hyun Kim. High-performance uniform stepper-based InP double-heterojunction bipolar transistor (DHBT) on a 3-inch InP substrate. Solid-State Electronics. 2024-07. https://doi.org/10.1016/j.sse.2024.108933