Impact of Gate-Electrode Material on Channel-Carrier Mobility of Thin-Film Transistor With High-k Gate Dielectric
Hao Sun; Yu Heng Deng; Qing He Wang; Wing Man Tang; P. T. Lai
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2024.3406029
The original publisher provides the full text and its access options.
Cite this source
Hao Sun; Yu Heng Deng; Qing He Wang; Wing Man Tang; P. T. Lai. Impact of Gate-Electrode Material on Channel-Carrier Mobility of Thin-Film Transistor With High-k Gate Dielectric. IEEE Electron Device Letters. 2024-07. https://doi.org/10.1109/led.2024.3406029