Light-Induced Reorientation Transition in an Antiferromagnetic Semiconductor
Bryan T. Fichera; Baiqing Lv; Karna Morey; Zongqi Shen; Changmin Lee; Elizabeth Donoway; Alex Liebman-Peláez; Anshul Kogar; Takashi Kurumaji; Martin Rodriguez-Vega; Rodrigo Humberto Aguilera del Toro; Mikel Arruabarrena; Batyr Ilyas; Tianchuang Luo; Peter Müller; Aritz Leonardo; Andres Ayuela; Gregory A. Fiete; Joseph G. Checkelsky; Joseph Orenstein
- Published
- Publisher
- American Physical Society (APS)
- Journal / collection
- Physical Review X
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1103/physrevx.15.011044
The original publisher provides the full text and its access options.
Cite this source
Bryan T. Fichera; Baiqing Lv; Karna Morey; Zongqi Shen; Changmin Lee; Elizabeth Donoway; Alex Liebman-Peláez; Anshul Kogar; Takashi Kurumaji; Martin Rodriguez-Vega; Rodrigo Humberto Aguilera del Toro; Mikel Arruabarrena; Batyr Ilyas; Tianchuang Luo; Peter Müller; Aritz Leonardo; Andres Ayuela; Gregory A. Fiete; Joseph G. Checkelsky; Joseph Orenstein. Light-Induced Reorientation Transition in an Antiferromagnetic Semiconductor. Physical Review X. 2025-02-26. https://doi.org/10.1103/physrevx.15.011044