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WS2 Nanosheet-Based Ultrascaled Field-Effect Transistor for Hydrogen Gas Sensing: Addressing the Sensitivity-Downscaling Trade-Off

Khalil Tamersit

Published
Publisher
MDPI AG
Journal / collection
Sensors
Research area
Semiconductors
Source type
Journal article
DOI
10.3390/s24206730

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Khalil Tamersit. WS2 Nanosheet-Based Ultrascaled Field-Effect Transistor for Hydrogen Gas Sensing: Addressing the Sensitivity-Downscaling Trade-Off. Sensors. 2024-10-19. https://doi.org/10.3390/s24206730

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