High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy
Oleg Makarovsky; Richard J. A. Hill; Tin S. Cheng; Alex Summerfield; Takeshi Taniguchi; Kenji Watanabe; Christopher J. Mellor; Amalia Patanè; Laurence Eaves; Sergei V. Novikov; Peter H. Beton
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Communications Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1038/s43246-024-00633-x
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Cite this source
Oleg Makarovsky; Richard J. A. Hill; Tin S. Cheng; Alex Summerfield; Takeshi Taniguchi; Kenji Watanabe; Christopher J. Mellor; Amalia Patanè; Laurence Eaves; Sergei V. Novikov; Peter H. Beton. High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy. Communications Materials. 2024-09-14. https://doi.org/10.1038/s43246-024-00633-x