A Reliable High-Performance Floating-Gate Transistor Based on ZrS 2 Native Oxidation for Optoelectronic Synergistic Artificial Synapses
Ding-Wen Cao; Meng-Na Wang; Huaqiang Pang; Gao-Li Luo; Jia-Rong Zhao; Jia-Ke Zhi; Wei Gao; Yu-Fang Liu; Yong Yan
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Materials & Interfaces
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsami.4c18913
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Cite this source
Ding-Wen Cao; Meng-Na Wang; Huaqiang Pang; Gao-Li Luo; Jia-Rong Zhao; Jia-Ke Zhi; Wei Gao; Yu-Fang Liu; Yong Yan. A Reliable High-Performance Floating-Gate Transistor Based on ZrS 2 Native Oxidation for Optoelectronic Synergistic Artificial Synapses. ACS Applied Materials & Interfaces. 2025-01-31. https://doi.org/10.1021/acsami.4c18913