Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air
B. A. Klein; A. A. Allerman; A. M. Armstrong
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0185336
The original publisher provides the full text and its access options.
Cite this source
B. A. Klein; A. A. Allerman; A. M. Armstrong. Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air. Applied Physics Letters. 2024-03-04. https://doi.org/10.1063/5.0185336