Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe 2 ) Transistor: Approaching Schottky–Mott Limit
Euyjin Park; Seung-Hwan Kim; Seong-Ji Min; Kyu-Hyun Han; Jong-Hyun Kim; Seung-Geun Kim; Tae-Hang Ahn; Hyun-Yong Yu
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Nano
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsnano.4c09384
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Cite this source
Euyjin Park; Seung-Hwan Kim; Seong-Ji Min; Kyu-Hyun Han; Jong-Hyun Kim; Seung-Geun Kim; Tae-Hang Ahn; Hyun-Yong Yu. Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe 2 ) Transistor: Approaching Schottky–Mott Limit. ACS Nano. 2024-10-15. https://doi.org/10.1021/acsnano.4c09384