Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories
Zhe Wang; Yan Liu; Jiuren Zhou; Genquan Han
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Microelectronics Journal
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mejo.2023.106030
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Cite this source
Zhe Wang; Yan Liu; Jiuren Zhou; Genquan Han. Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories. Microelectronics Journal. 2024-01. https://doi.org/10.1016/j.mejo.2023.106030