Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer
Juan Xiong; Xintong Xie; Jie Wei; Shuxiang Sun; Xiaorong Luo
- Published
- Publisher
- MDPI AG
- Journal / collection
- Micromachines
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/mi15091158
The original publisher provides the full text and its access options.
Cite this source
Juan Xiong; Xintong Xie; Jie Wei; Shuxiang Sun; Xiaorong Luo. Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer. Micromachines. 2024-09-16. https://doi.org/10.3390/mi15091158