Annealing Process on Metal–Oxide–Semiconductor Channel Properties for Quasivertical GaN‐on‐Sapphire Trench Metal–Oxide–Semiconductor Field‐Effect Transistor
Jiaan Zhou; An Yang; Guohao Yu; Runxian Xing; Bohan Guo; Chunfeng Hao; Yu Li; Bosen Liu; Huixin Yue; Jinxia Jiang; Li Zhang; Xuguang Deng; Zhongming Zeng; Baoshun Zhang; Xinping Zhang
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (RRL) – Rapid Research Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssr.202400075
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Cite this source
Jiaan Zhou; An Yang; Guohao Yu; Runxian Xing; Bohan Guo; Chunfeng Hao; Yu Li; Bosen Liu; Huixin Yue; Jinxia Jiang; Li Zhang; Xuguang Deng; Zhongming Zeng; Baoshun Zhang; Xinping Zhang. Annealing Process on Metal–Oxide–Semiconductor Channel Properties for Quasivertical GaN‐on‐Sapphire Trench Metal–Oxide–Semiconductor Field‐Effect Transistor. physica status solidi (RRL) – Rapid Research Letters. 2024-06-12. https://doi.org/10.1002/pssr.202400075