Density Functional Theory Study of Polarization-Induced Electron Confinement by Dilute Boron Alloying in ε-Ga 2 O 3 Nanometer-Thick Film for High Electron Mobility Transistor
Yan Wang; Jiahe Cao; Yimin Liao; Chuang Zhang; Zhigao Xie; Hanzhao Song; Jierui Xue; Andeng Qu; Yew Hoong Wong; Zengxia Mei; Chee Keong Tan
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Nano Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsanm.4c00717
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Cite this source
Yan Wang; Jiahe Cao; Yimin Liao; Chuang Zhang; Zhigao Xie; Hanzhao Song; Jierui Xue; Andeng Qu; Yew Hoong Wong; Zengxia Mei; Chee Keong Tan. Density Functional Theory Study of Polarization-Induced Electron Confinement by Dilute Boron Alloying in ε-Ga 2 O 3 Nanometer-Thick Film for High Electron Mobility Transistor. ACS Applied Nano Materials. 2024-04-05. https://doi.org/10.1021/acsanm.4c00717