Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor
Moonyoung Jeong; Sangho Lee; Yootak Jun; Kiseok Lee; Seokhan Park; Jeonghoon Oh; Ilgweon Kim; Jemin Park; Jaihyuk Song
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Reliability Physics Symposium (IRPS)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/irps48228.2024.10529491
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Cite this source
Moonyoung Jeong; Sangho Lee; Yootak Jun; Kiseok Lee; Seokhan Park; Jeonghoon Oh; Ilgweon Kim; Jemin Park; Jaihyuk Song. Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor. 2024 IEEE International Reliability Physics Symposium (IRPS). 2024-04-14. https://doi.org/10.1109/irps48228.2024.10529491