Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures
Dongsheng Zhao; Liang He; Lijuan Wu; Qingzhong Xiao; Chang Liu; Yuan Chen; Zhiyuan He; Deqiang Yang; Mingen Lv; Zijun Cheng
- Published
- Publisher
- MDPI AG
- Journal / collection
- Micromachines
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/mi15020171
The original publisher provides the full text and its access options.
Cite this source
Dongsheng Zhao; Liang He; Lijuan Wu; Qingzhong Xiao; Chang Liu; Yuan Chen; Zhiyuan He; Deqiang Yang; Mingen Lv; Zijun Cheng. Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures. Micromachines. 2024-01-24. https://doi.org/10.3390/mi15020171