A Novel Embedded Drain Dual‐Gate Tunnel Field Effect Transistor with Drain Dielectric Pocket for Suppressing Ambipolar Effect
Qing Chen; Dandan Wang; Ruixia Miao; Lulu Yang; Jianwei Li; Xiaofeng Yang; Baojun Zhang; Jing Gu; Zengwei Qi; Shiguang Shang
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202400946
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Cite this source
Qing Chen; Dandan Wang; Ruixia Miao; Lulu Yang; Jianwei Li; Xiaofeng Yang; Baojun Zhang; Jing Gu; Zengwei Qi; Shiguang Shang. A Novel Embedded Drain Dual‐Gate Tunnel Field Effect Transistor with Drain Dielectric Pocket for Suppressing Ambipolar Effect. physica status solidi (a). 2025-03-09. https://doi.org/10.1002/pssa.202400946