Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Conference paper

Designing a Vertical Gallium Arsenide (GaAs) Channel High Electron Mobility Transistor (HEMT) for power applications in integrated circuit (IC) technology

B. S. Hari; Bhaskar Roy; M. Elangovan; S. Kaliappan; G. Pavithra; T. C. Manjunath

Published
Publisher
AIP Publishing
Journal / collection
AIP Conference Proceedings
Research area
Semiconductors
Source type
Conference paper
DOI
10.1063/5.0225353

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

B. S. Hari; Bhaskar Roy; M. Elangovan; S. Kaliappan; G. Pavithra; T. C. Manjunath. Designing a Vertical Gallium Arsenide (GaAs) Channel High Electron Mobility Transistor (HEMT) for power applications in integrated circuit (IC) technology. AIP Conference Proceedings. 2024. https://doi.org/10.1063/5.0225353

Download RIS