High Performance BEoL-Compatible FeRAM with Robust Endurance >10 9 Cycles by Two P r > 32 uC/cm 2 HfZrO 2 Ferroelectric Film and CAAC-IGZO as Low Leakage Transistor
Hiroshi Yoshida; Min-Hung Lee; Shang-Shiun Chuang; Chuan-Hua Chang; Wen-Hsiang Hsieh; Yung-Lung Hsu; Shih-Chi Yen; Zong-Han Li; Fu-Sheng Chang; Ming-Han Liao; Shou-Zen Chang
- Published
- Publisher
- The Japan Society of Applied Physics
- Journal / collection
- Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.7567/ssdm.2024.ps-02-18
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Hiroshi Yoshida; Min-Hung Lee; Shang-Shiun Chuang; Chuan-Hua Chang; Wen-Hsiang Hsieh; Yung-Lung Hsu; Shih-Chi Yen; Zong-Han Li; Fu-Sheng Chang; Ming-Han Liao; Shou-Zen Chang. High Performance BEoL-Compatible FeRAM with Robust Endurance >10 9 Cycles by Two P r > 32 uC/cm 2 HfZrO 2 Ferroelectric Film and CAAC-IGZO as Low Leakage Transistor. Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials. 2024-09-03. https://doi.org/10.7567/ssdm.2024.ps-02-18