Enhanced stability in InGaZnO thin-film transistor via fluorine plasma treatment and low-temperature annealing
Yinghui Zhong; Menghan Qin; Xiaodong Huang; Chao Zhang
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Microelectronics Journal
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mejo.2026.107405
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Cite this source
Yinghui Zhong; Menghan Qin; Xiaodong Huang; Chao Zhang. Enhanced stability in InGaZnO thin-film transistor via fluorine plasma treatment and low-temperature annealing. Microelectronics Journal. 2026-10. https://doi.org/10.1016/j.mejo.2026.107405