Effect of charge carrier mobility in channel vs. source-drain region on vertical organic field effect transistor performance
Ramesh Singh Bisht; Pramod Kumar
- Published
- Publisher
- AIP Publishing
- Journal / collection
- AIP Conference Proceedings
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1063/5.0248357
The original publisher provides the full text and its access options.
Cite this source
Ramesh Singh Bisht; Pramod Kumar. Effect of charge carrier mobility in channel vs. source-drain region on vertical organic field effect transistor performance. AIP Conference Proceedings. 2025. https://doi.org/10.1063/5.0248357