Highly efficient spin field-effect transistor based on nanographene and hBN heterostructures: spintronic and quantum transport properties
Hazem Abdelsalam; Mahmoud A.S. Sakr; Nahed H. Teleb; Omar H. Abd-Elkader; Wang Zhilong; Yushen Liu; Qinfang Zhang
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Chinese Journal of Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.cjph.2024.05.012
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Cite this source
Hazem Abdelsalam; Mahmoud A.S. Sakr; Nahed H. Teleb; Omar H. Abd-Elkader; Wang Zhilong; Yushen Liu; Qinfang Zhang. Highly efficient spin field-effect transistor based on nanographene and hBN heterostructures: spintronic and quantum transport properties. Chinese Journal of Physics. 2024-08. https://doi.org/10.1016/j.cjph.2024.05.012