Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor
Jianan Song; Anusmita Chakravorty; Miaomiao Jin; Rongming Chu
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0185373
The original publisher provides the full text and its access options.
Cite this source
Jianan Song; Anusmita Chakravorty; Miaomiao Jin; Rongming Chu. Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor. Applied Physics Letters. 2024-04-22. https://doi.org/10.1063/5.0185373