Thermal Annealing-Driven Modulation of Charge Trapping and Synaptic Plasticity in a Sol–Gel AlO x -Based Floating Gate Transistor
Sneha Bhise; Young-Seok Song; Dae-Hong Kim; Qun-Gao Chen; Hee Yun Yang; Ankita Nikam; Byung Joon Moon; Sukang Bae; Sungjun Park; Seoung-Ki Lee; Hyunjung Lee; Chu-Chen Chueh; Tae-Wook Kim
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Materials & Interfaces
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsami.5c00954
The original publisher provides the full text and its access options.
Cite this source
Sneha Bhise; Young-Seok Song; Dae-Hong Kim; Qun-Gao Chen; Hee Yun Yang; Ankita Nikam; Byung Joon Moon; Sukang Bae; Sungjun Park; Seoung-Ki Lee; Hyunjung Lee; Chu-Chen Chueh; Tae-Wook Kim. Thermal Annealing-Driven Modulation of Charge Trapping and Synaptic Plasticity in a Sol–Gel AlO x -Based Floating Gate Transistor. ACS Applied Materials & Interfaces. 2025-03-05. https://doi.org/10.1021/acsami.5c00954