Comparative Simulation Study of InGaN and Silicon Channel Stack Oxide Twin Gate Field Effect Transistor Based Ammonia Gas Sensor
Divya Babbar; Neha Garg; Sneha Kabra
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Sensing and Imaging
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s11220-024-00469-2
The original publisher provides the full text and its access options.
Cite this source
Divya Babbar; Neha Garg; Sneha Kabra. Comparative Simulation Study of InGaN and Silicon Channel Stack Oxide Twin Gate Field Effect Transistor Based Ammonia Gas Sensor. Sensing and Imaging. 2024-04-16. https://doi.org/10.1007/s11220-024-00469-2