Understanding Trap-Induced Barrier Height Fluctuations in Nickel-Silicon Contacts for Advanced Semiconductor Technology
Deepak K. Sharma; Arjun Datta; Jatinder P. Singh; Kanishk; Rohan Srivastava; Gourab Das; Jyoti Kedia; Sanjeev Kumar; Vivek Kumar; Arun K. Singh
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/edtm58488.2024.10512149
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Cite this source
Deepak K. Sharma; Arjun Datta; Jatinder P. Singh; Kanishk; Rohan Srivastava; Gourab Das; Jyoti Kedia; Sanjeev Kumar; Vivek Kumar; Arun K. Singh. Understanding Trap-Induced Barrier Height Fluctuations in Nickel-Silicon Contacts for Advanced Semiconductor Technology. 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2024-03-03. https://doi.org/10.1109/edtm58488.2024.10512149