Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations
Maximilian Ley; Jan F. Dick; Jörg Schulze
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 47th MIPRO ICT and Electronics Convention (MIPRO)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/mipro60963.2024.10569785
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Cite this source
Maximilian Ley; Jan F. Dick; Jörg Schulze. Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations. 2024 47th MIPRO ICT and Electronics Convention (MIPRO). 2024-05-20. https://doi.org/10.1109/mipro60963.2024.10569785