Dependence of the Electrical Behavior of an Indium-Gallium-Zinc Oxide Thin-Film Transistor on the Process Condition of Plasma-Based Fluorination
Wei Jiang; Zhihe Xia; Man Wong
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2023.3343686
The original publisher provides the full text and its access options.
Cite this source
Wei Jiang; Zhihe Xia; Man Wong. Dependence of the Electrical Behavior of an Indium-Gallium-Zinc Oxide Thin-Film Transistor on the Process Condition of Plasma-Based Fluorination. IEEE Transactions on Electron Devices. 2024-02. https://doi.org/10.1109/ted.2023.3343686