Non-Fourier electrothermal fully coupled analysis of a 5 nm gate-all-around field-effect transistor based on density gradient theory
Zhe Liu; Bo Hua Sun; Hai Hang Cui; Kai Sun
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Physics of Fluids
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0253246
The original publisher provides the full text and its access options.
Cite this source
Zhe Liu; Bo Hua Sun; Hai Hang Cui; Kai Sun. Non-Fourier electrothermal fully coupled analysis of a 5 nm gate-all-around field-effect transistor based on density gradient theory. Physics of Fluids. 2025-02-01. https://doi.org/10.1063/5.0253246