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Research literature / Conference paper

Highly-Scaled BEOL E-Mode Transistor and Discrete-Domain Ferroelectric Memory Platform Enabled by PEALD In 2 O 3

Yanjie Shao; John C.-C. Huang; Elham Rafie Borujeny; Tyra E. Espedal; Dimitri A. Antoniadis; Jesús A. Del Alamo

Published
Publisher
IEEE
Journal / collection
2024 IEEE International Electron Devices Meeting (IEDM)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/iedm50854.2024.10873392

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Yanjie Shao; John C.-C. Huang; Elham Rafie Borujeny; Tyra E. Espedal; Dimitri A. Antoniadis; Jesús A. Del Alamo. Highly-Scaled BEOL E-Mode Transistor and Discrete-Domain Ferroelectric Memory Platform Enabled by PEALD In 2 O 3. 2024 IEEE International Electron Devices Meeting (IEDM). 2024-12-07. https://doi.org/10.1109/iedm50854.2024.10873392

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