Optimized Design of GaN Vertical Trench-Gate Field-Effect Transistor
Huakai Yang; Shijie He; Wei He; Fangxi Peng
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 7th International Conference on Mechatronics and Computer Technology Engineering (MCTE)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/mcte62870.2024.11117638
The original publisher provides the full text and its access options.
Cite this source
Huakai Yang; Shijie He; Wei He; Fangxi Peng. Optimized Design of GaN Vertical Trench-Gate Field-Effect Transistor. 2024 7th International Conference on Mechatronics and Computer Technology Engineering (MCTE). 2024-08-23. https://doi.org/10.1109/mcte62870.2024.11117638