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Research literature / Conference paper

600V Insulated Gate Bipolar Transistor Design for Improving Breakdown Voltage in Trench Floating P-Well Charge Storage Layer Gate Bipolar Transistor

Lee Chao Chan; Kao Yi Sheng; Yen Shih Keng; Xie Shang Rong; Chien Feng Tso

Published
Publisher
IEEE
Journal / collection
2024 7th International Conference on Electronics, Communications, and Control Engineering (ICECC)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/icecc63398.2024.00016

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Lee Chao Chan; Kao Yi Sheng; Yen Shih Keng; Xie Shang Rong; Chien Feng Tso. 600V Insulated Gate Bipolar Transistor Design for Improving Breakdown Voltage in Trench Floating P-Well Charge Storage Layer Gate Bipolar Transistor. 2024 7th International Conference on Electronics, Communications, and Control Engineering (ICECC). 2024-03-22. https://doi.org/10.1109/icecc63398.2024.00016

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