Study on electrical performance of AlGaN/GaN high electron mobility transistor based on cap layer design
Tieying Zhang; Peng Cui; Xin Luo; Siheng Chen; Liu Wang; Jiacheng Dai; Kaifa Qi; Handoko Linewih; Zhaojun Lin; Xiangang Xu; Jisheng Han
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Solid-State Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.sse.2024.109051
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Cite this source
Tieying Zhang; Peng Cui; Xin Luo; Siheng Chen; Liu Wang; Jiacheng Dai; Kaifa Qi; Handoko Linewih; Zhaojun Lin; Xiangang Xu; Jisheng Han. Study on electrical performance of AlGaN/GaN high electron mobility transistor based on cap layer design. Solid-State Electronics. 2025-02. https://doi.org/10.1016/j.sse.2024.109051