Generating stacking faults in 4H–SiC junction transistor by indentation and forward biasing
Tingwei Zhang; Adrian Kitai
- Published
- Publisher
- AIP Publishing
- Journal / collection
- AIP Advances
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0234657
The original publisher provides the full text and its access options.
Cite this source
Tingwei Zhang; Adrian Kitai. Generating stacking faults in 4H–SiC junction transistor by indentation and forward biasing. AIP Advances. 2024-11-01. https://doi.org/10.1063/5.0234657