Self-Induced Ge-Doped HfO 2 Applied to Ge Stacked Nanowires Ferroelectric Gate-All-Around Field-Effect Transistor with Steep Subthreshold Slope Under O 3 Treatment with GeO 2 as Interfacial Layer
Yi-Wen Lin; Yu-Hsien Huang; Shan-Wen Lin; Guang-Li Luo; Yu-Hsien Lin; Yung-Chun Wu; Fu-Ju Hou
- Published
- Publisher
- The Electrochemical Society
- Journal / collection
- ECS Journal of Solid State Science and Technology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1149/2162-8777/ad4b9d
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Cite this source
Yi-Wen Lin; Yu-Hsien Huang; Shan-Wen Lin; Guang-Li Luo; Yu-Hsien Lin; Yung-Chun Wu; Fu-Ju Hou. Self-Induced Ge-Doped HfO 2 Applied to Ge Stacked Nanowires Ferroelectric Gate-All-Around Field-Effect Transistor with Steep Subthreshold Slope Under O 3 Treatment with GeO 2 as Interfacial Layer. ECS Journal of Solid State Science and Technology. 2024-05-01. https://doi.org/10.1149/2162-8777/ad4b9d