Electrical stress reliability of graphene field effect transistor under different bias voltages
Song-Wen Wang; Hong-Xia Guo; Teng Ma; Zhi-Feng Lei; Wu-Ying Ma; Xiang-Li Zhong; Hong Zhang; Xiao-Jie Lu; Ji-Fang Li; Jun-Lin Fang; Tian-Xiang Zeng; School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China; State Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, China Electronic Product Reliability and Environmental Research Institute, Guangzhou 511300, China; Northwest Institute of Nuclear Technology, Xi’an 710024, China
- Published
- Publisher
- Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
- Journal / collection
- Acta Physica Sinica
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.7498/aps.73.20241365
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Cite this source
Song-Wen Wang; Hong-Xia Guo; Teng Ma; Zhi-Feng Lei; Wu-Ying Ma; Xiang-Li Zhong; Hong Zhang; Xiao-Jie Lu; Ji-Fang Li; Jun-Lin Fang; Tian-Xiang Zeng; School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China; State Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, China Electronic Product Reliability and Environmental Research Institute, Guangzhou 511300, China; Northwest Institute of Nuclear Technology, Xi’an 710024, China. Electrical stress reliability of graphene field effect transistor under different bias voltages. Acta Physica Sinica. 2024. https://doi.org/10.7498/aps.73.20241365