Effect of Metal Capping Layer in Achieving Record High p-Type SnO Thin Film Transistor Mobility
Kishwar Mashooq; Jaesung Jo; Rebecca L. Peterson
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2023.3332074
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Cite this source
Kishwar Mashooq; Jaesung Jo; Rebecca L. Peterson. Effect of Metal Capping Layer in Achieving Record High p-Type SnO Thin Film Transistor Mobility. IEEE Transactions on Electron Devices. 2024-01. https://doi.org/10.1109/ted.2023.3332074