Dependence of the capacitance of trap states at the oxide–semiconductor interface on the interface trap density in nanoscale silicon-on-insulator FinFET transistors and its effect on electrophysical parameters
Mirzabakhrom Foziljonov; Nuritdin Yunusaliev; Biloliddin Ergashev; Oybek Muminov; Gaybullo Tojiboyev
- Published
- Publisher
- WNGB Scientific Publishing House Sp. z o.o.
- Journal / collection
- Advances in Science and Technology Research Journal
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.12913/22998624/225650
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Cite this source
Mirzabakhrom Foziljonov; Nuritdin Yunusaliev; Biloliddin Ergashev; Oybek Muminov; Gaybullo Tojiboyev. Dependence of the capacitance of trap states at the oxide–semiconductor interface on the interface trap density in nanoscale silicon-on-insulator FinFET transistors and its effect on electrophysical parameters. Advances in Science and Technology Research Journal. 2026-10-01. https://doi.org/10.12913/22998624/225650