Tunable negative differential resistance behavior in the nitrogen-doped zigzag GeSe nanoribbon based single-gate field effect transistor
Caixia Guo; Wenlong Jiao; Tianxing Wang
- Published
- Publisher
- Informa UK Limited
- Journal / collection
- Ferroelectrics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1080/00150193.2023.2300613
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Cite this source
Caixia Guo; Wenlong Jiao; Tianxing Wang. Tunable negative differential resistance behavior in the nitrogen-doped zigzag GeSe nanoribbon based single-gate field effect transistor. Ferroelectrics. 2024-02-20. https://doi.org/10.1080/00150193.2023.2300613