New Steep Subthreshold Slope Device “Gate-Controlled Carrier-Injection SOI-Transistor”
Haruki Yonezaki; Takayuki Mori; Jiro Ida
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/edtm58488.2024.10511730
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Cite this source
Haruki Yonezaki; Takayuki Mori; Jiro Ida. New Steep Subthreshold Slope Device “Gate-Controlled Carrier-Injection SOI-Transistor”. 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2024-03-03. https://doi.org/10.1109/edtm58488.2024.10511730