Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments
Nayeon Kim; Hyoungjin Park; Jiae Jeong; Hyun Wook Kim; Eunryeong Hong; Seonuk Jeon; Hyeonsik Choi; Yunsur Kim; Jiyong Woo
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2024.3435403
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Cite this source
Nayeon Kim; Hyoungjin Park; Jiae Jeong; Hyun Wook Kim; Eunryeong Hong; Seonuk Jeon; Hyeonsik Choi; Yunsur Kim; Jiyong Woo. Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments. IEEE Electron Device Letters. 2024-10. https://doi.org/10.1109/led.2024.3435403