High Performance Indium-Tin-Zinc-Oxide Thin-Film Transistor with Hexamethyldisilazane Passivation
Xinkai Sun; Jae-Hoon Han; Zhenyuan Xiao; Simin Chen; Taewon Jin; Taehyeon Noh; Seoungmin Park; Jaekyun Kim; Jidong Jin; Younghyun Kim
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.4c00100
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Cite this source
Xinkai Sun; Jae-Hoon Han; Zhenyuan Xiao; Simin Chen; Taewon Jin; Taehyeon Noh; Seoungmin Park; Jaekyun Kim; Jidong Jin; Younghyun Kim. High Performance Indium-Tin-Zinc-Oxide Thin-Film Transistor with Hexamethyldisilazane Passivation. ACS Applied Electronic Materials. 2024-04-10. https://doi.org/10.1021/acsaelm.4c00100