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Study on displacement damage effect of highly charged ions in carbon nanotube field-effect transistor

Xirong Yang; Jian Zeng; Jie Liu; Shengxia Zhang; Hongda Zhang; Shifan Gao; Pengfei Zhai; Li Cai; Peipei Hu; Li Liu

Published
Publisher
Elsevier BV
Journal / collection
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Research area
Semiconductors
Source type
Journal article
DOI
10.1016/j.nimb.2024.165361

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Xirong Yang; Jian Zeng; Jie Liu; Shengxia Zhang; Hongda Zhang; Shifan Gao; Pengfei Zhai; Li Cai; Peipei Hu; Li Liu. Study on displacement damage effect of highly charged ions in carbon nanotube field-effect transistor. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2024-07. https://doi.org/10.1016/j.nimb.2024.165361

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