Modelling and Simulation Analysis of III-V Type Material Double-Gate Tunnel Field Effect Transistor
Beno. A; Monisha .V; Sabarisha. A
- Published
- Publisher
- Tejass Publishers
- Journal / collection
- IJARCCE
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.17148/ijarcce.2024.13810
The original publisher provides the full text and its access options.
Cite this source
Beno. A; Monisha .V; Sabarisha. A. Modelling and Simulation Analysis of III-V Type Material Double-Gate Tunnel Field Effect Transistor. IJARCCE. 2024-07-30. https://doi.org/10.17148/ijarcce.2024.13810