Single Transistor Memory with Long Retention Time and High Endurance at 300 K
Yi Han; Jingxuan Sun; Jin-Hee Bae; Ionut Radu; Joachim Knoch; Detlev Gruetzmacher; Qing-Tai Zhao
- Published
- Publisher
- The Japan Society of Applied Physics
- Journal / collection
- Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.7567/ssdm.2024.n-4-01
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Cite this source
Yi Han; Jingxuan Sun; Jin-Hee Bae; Ionut Radu; Joachim Knoch; Detlev Gruetzmacher; Qing-Tai Zhao. Single Transistor Memory with Long Retention Time and High Endurance at 300 K. Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials. 2024-09-03. https://doi.org/10.7567/ssdm.2024.n-4-01