Positive Bias Stress Measurement Guideline and Band Analysis for Evaluating Instability of Oxide Semiconductor Transistors
Qi Jiang; Koustav Jana; Kasidit Toprasertpong; Shuhan Liu; H.-S. Philip Wong
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/vlsitechnologyandcir46783.2024.10631369
The original publisher provides the full text and its access options.
Cite this source
Qi Jiang; Koustav Jana; Kasidit Toprasertpong; Shuhan Liu; H.-S. Philip Wong. Positive Bias Stress Measurement Guideline and Band Analysis for Evaluating Instability of Oxide Semiconductor Transistors. 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2024-06-16. https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631369